A quantitative investigation of divacancy production enhancement by interstitial oxygen in electron-irradiated silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 230-235
- https://doi.org/10.1016/0378-4363(83)90252-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Infrared studies of low temperature electron irradiated silicon containing germanium oxygen and carbon†Radiation Effects, 1971
- Absorption measurements in neutron irradiated siliconRadiation Effects, 1971
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Production of Divacancies and Vacancies by Electron Irradiation of SiliconPhysical Review B, 1965
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- Silicon Divacancy and its Direct Production by Electron IrradiationPhysical Review Letters, 1961
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961