Low energy electron microscopy studies of Ge and Ag growth on Si(111)
- 1 December 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 236 (1-2) , 140-145
- https://doi.org/10.1016/0040-6090(93)90659-d
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Local dimer exchange in surfactant-mediated epitaxial growthPhysical Review Letters, 1992
- A low-energy electron microscopy study of the system Si(111)AuSurface Science, 1991
- Scanning tunneling microscope instrumentationReview of Scientific Instruments, 1989
- Initial epitaxial growth of Cu on Mo{011} by low-energy electron microscopy and photoemission electron microscopyJournal of Applied Physics, 1989
- Photoemission microscopy and atomic steps on Mo{011}Surface Science, 1988
- Reflection electron microscopyJournal of Applied Crystallography, 1987
- Scanning tunneling microscopyJournal of Applied Physics, 1987
- The resolution of the low energy electron reflection microscopeUltramicroscopy, 1985
- Visualization of submonolayers and surface topography by biassed secondary electron imaging: Application to Ag layers on Si and W surfacesSurface Science, 1985
- An analytical reflection and emission UHV surface electron microscopeUltramicroscopy, 1985