Phenomenological Model of the CVD Epitaxial Reactor

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Abstract
A simplified model is proposed to determine the thermodynamic constants of the transport reaction in a close‐spaced configuration, even when the reacting species are unknown. For example, the enthalpy variation, the activation energies of condensation, and sublimation in the water vapor transport of are determined (, , and ). The model is useful for interpreting the experimental results in epitaxial processes. In the low pressure iodine transport of silicon, it is shown that the growth rate is not a diffusion controlled process; from the energy for the reaction , we found and . An important result of the analysis is that determination of enthalpy variation cannot be obtained only from the slope of the growth rate‐temperature dependence.

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