Sub-picosecond wideband efficient saturable absorbercreated by high energy (200 MeV) irradiation of Au + ions into bulk GaAs
- 16 April 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (8) , 818-820
- https://doi.org/10.1049/el:19980319
Abstract
The authors demonstrate, using pump-probe experiments, that defects created by a 200 MeV Au+ ion beam in bulk GaAs reduce the relaxation time of the saturable absorption of the material to as little as 200 fs. The sample absorption is modulated over a spectral width of 50 nm. The integrated value of the absorption modulation thus shows the high absorption efficiency of the irradiated material. A very small variation in relaxation time is found when the density of photocreated carriers is increased to ~5 × 1018 cm–3. This material appears to be very promising for applications in optical processing and ultrafast measurement at high pulse repetition rates.Keywords
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