GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching
- 20 July 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (15) , 954-956
- https://doi.org/10.1049/el:19890639
Abstract
A l.5 μm GaInAsP/InP laser is monolithically integrated with a photodiode. The laser is isolated from the photodiode by an etched groove formed by reactive ion etching. Ethane and hydrogen gases are used as an etchant of reactive ion etching instead of chlorinated gas. The threshold current of the laser under CW operation and the sensitivity of the monitor photodiode are 57 mA and 0.24 A/W, respectively.Keywords
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