Noise performance of submicrometer AlInAs-GaInAs HEMTs

• 1 January 1988
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 35  (12) , 2441
• https://doi.org/10.1109/16.8861

Abstract

Keywords

• LATTICES
• RADIO FREQUENCY
• NOISE MEASUREMENT
• MOLECULAR BEAM EPITAXY
• GAIN
• GALLIUM ARSENIDE
• NOISE FIGURE
• EHF