Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy
- 1 January 1989
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 38-41, 1283-1288
- https://doi.org/10.4028/www.scientific.net/msf.38-41.1283
Abstract
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