Comment on ’’Energy gap in Si and Ge: Impurity dependence’’
- 1 October 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6432-6433
- https://doi.org/10.1063/1.328592
Abstract
A recent paper by Mahan on energy-gap narrowing in extrinsic semiconductors is compared and contrasted with a previous analysis by Inkson. It is found that, contrary to a statement by Mahan, the two papers rely on the same physical basis but use different means of calculation. The source of confusion is identified as the use of an inconsistent terminology.This publication has 5 references indexed in Scilit:
- Effects of Electron-Electron and Electron-Phonon Interactions on the One-Electron States of SolidsPublished by Elsevier ,2008
- General theory of effective HamiltoniansPhysical Review A, 1981
- Energy gap in Si and Ge: Impurity dependenceJournal of Applied Physics, 1980
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- The effect of electron interaction on the band gap of extrinsic semiconductorsJournal of Physics C: Solid State Physics, 1976