Selected area polishing for precision TEM sample preparation

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Abstract
A selected area mechanical polishing technique has been developed to improve the precision of cross‐sectional TEM sample preparation, based upon the early work of Benedict and colleagues [Benedict et al. (1990) MRS Symp. Proc. Vol. 199, p. 189]. TEM samples were made from a pre‐selected section through the middle of a 1 μm wide band of transistors extending laterally for more than 1 mm by precise control over the plane of polish with a corresponding reduction in sample preparation time. To illustrate the application of this technique, a uniformly thin, electron transparent TEM sample of a single, specific, failed transistor is obtained from a 4 mm by 10 mm device array. © Wiley‐Liss, Inc.