Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S) , 334-337
- https://doi.org/10.1143/jjap.32.334
Abstract
A multiply repeated process of thinning of silicon layer and annealing of the bonded silicon-quartz interface is proposed for tight bonding between a silicon wafer and a quartz wafer which have different thermal expansion coefficients. Silicon layers on quartz with a thickness of 2 µm±0.5 µm were debonded by a high temperature annealing over 650 C, whereas in the case of thinner silicon layers with a thickness under 0.5 µm tensile strengths over 80 MPa (800 kgf/cm2) were obtained in the temperature range from 700 C to 1100 C.Keywords
This publication has 2 references indexed in Scilit:
- Silicon Wafer Bonding Mechanism for Silicon-on-Insulator StructuresJapanese Journal of Applied Physics, 1990
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974