Time-of-flight measurements in Langmuir-Blodgett films of poly(3-hexylthiophene)
- 1 December 1997
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 3145, 389-395
- https://doi.org/10.1117/12.279290
Abstract
Time-of-Flight (TOF) measurements in the voltage mode in thin films of poly(3-hexylthiophene) (PHT) have been studied. Thin films of PHT were fabricated using Langmuir- Blodgett (LB) technique giving unique possibility of controlling the thickness of sandwich type samples. We have used a method developed for the study of subnanosecond transients in thin films of amorphous semiconductors. The TOF signals have been measured in LB films for the first time, and a hole mobility of the order of 8 X 10-3 cm2/Vs in PHT LB films has been estimated.Keywords
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