Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition
- 2 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (1) , 48-50
- https://doi.org/10.1049/el:19860033
Abstract
Planar InGaAs/InP heterostructure PIN photodiodes have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapour deposition. Diffused p-n junction devices of 75 μm diameter have low dark currents (~10 nA at −10 V), good quantum efficiencies (~50% without AR coatings) and response times less than 40 ps.Keywords
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