Electronic transport in ReO3: dc conductivity and Hall effect

The dc resistivity and low-field Hall effect of the transition-metal oxide Re${\mathrm{O}}_3$ have been measured as a function of temperature. The samples used were oriented single crystals which were large enough for measurements to be made by a conventional four-point probe method. The samples of Re${\mathrm{O}}_3$ showed metallic conductivity with a resistance ratio $\frac{\rho \mathrm{}\left(300\right)\mathrm{}}{\rho \mathrm{}\left(4.2\right)\mathrm{}}$ between 50 and 70. At 300°K resistivity is (8.95 ± 0.03) × ${10}^{-6\mathrm{}}$ Ω cm, and the Hall coefficient at 300°K is (-3.28 ± 0.10) × ${10}^{-4\mathrm{}}$ ${\mathrm{cm}}^3$ ${\mathrm{C}}^{-1\mathrm{}}$. The experimental results show that Re${\mathrm{O}}_3$ behaves like a simple metal with one free electron per unit cell. A least-squares fitting routine is used to compare the resistivity data to a model involving electron-phonon and electron-electron scattering.