Circuit representation of avalanche region of IMPATT diodes for different carrier velocities and ionisation rates of electrons and holes

31 December 1970

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 6 (26) , 849-850
https://doi.org/10.1049/el:19700585

Abstract

A parallel resonant circuit representing the small-signal behaviour of the avalanche region of IMPATT diodes is given. The components are calculated in a nonquasistatic manner for different ionisation rates and drift velocities of electrons and holes. With the results, the avalanche frequencies of Si, Ge and GaAs as functions of the avalanche zone width are compared.

Keywords

IMPATT DEVICES
EQUIVALENT CIRCUITS

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