Epitaxial solar cells on silicon EFG ’’ribbon’’ substrates
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (3) , 157-159
- https://doi.org/10.1063/1.88679
Abstract
Epitaxial solar cell structures grown on polycrystalline silicon ’’ribbon’’ substrates (prepared by the edge‐defined‐growth process) are compared to devices made by direct diffusion into similar material. Efficiency values of 10% (AM‐1) have been achieved by the epitaxial structures, which are substantially higher than achieved by diffusion. The improvement is shown to result mainly from the lower saturation current density of the epitaxial junctions.Keywords
This publication has 4 references indexed in Scilit:
- The EFG process applied to the growth of silicon ribbons*Journal of Electronic Materials, 1975
- Epitaxial silicon solar cellJournal of Applied Physics, 1975
- Growth and characterization of silicon ribbons produced by a capillary action shaping techniquePhysica Status Solidi (a), 1975
- Epitaxial silicon p-n junctions on polycrystalline ``ribbon'' substratesApplied Physics Letters, 1974