Schottky barrier height measurements of epitaxial NiSi2 on Si
- 15 October 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8) , 853-855
- https://doi.org/10.1063/1.96007
Abstract
Photoresponse measurements of the Schottky barrier heights of epitaxial NiSi2 layers on nondegenerate n‐(111) Si, for type‐A and type‐B orientations, have been performed. The type‐A and type‐B cases are consistently observed to differ in barrier height by greater than 0.1 eV. We obtain measured values for φB0 (at T=300 K) of 0.62±0.01 eV and 0.77±0.05 eV for type A and B, respectively.Keywords
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