Current Injection Effects in a Nb/AlOx-Al/Nb/n-InSb Triode

Abstract
A Nb/AlO x -Al/Nb/n-InSb triode has been fabricated and tested. The device is made on the (100) surface of undoped n-type InSb. The fabrication process is similar to that for Nb/Al-AlO x /Nb Josephson junctions. The transfer efficiency for injected electrons through a 240 nm thick Nb base layer was measured to be 1.6×10-4 at 4.2 K.

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