Auger depth profiling of Ag layer epitaxially grown on Pb(111) surface: A direct evidence of substrate diffusion
- 21 April 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (16) , 1072-1074
- https://doi.org/10.1063/1.96600
Abstract
Auger depth profiling of an Ag layer grown epitaxially on a Pb(111) surface shows that constant diffusion of Pb occurs and a saturated ordered monolayer of Pb is finally formed on the Ag/vacuum interface. The surface concentration of Pb is found to increase exponentially as a function of time, after the sputtering ion beam was turned off. The time constant of this phenomenon (∼15 s–2.5 min) is dependent on the length of the ion sputtering time and the thermal annealing of the sample prior to the depth profiling. The diffusivity is estimated to be in the range of 2.1×10−12–2.1×10−13 cm2/s at room temperature.Keywords
This publication has 5 references indexed in Scilit:
- High resolution surface study by In-situ UHV transmission electron microscopyUltramicroscopy, 1982
- Deposition of monolayer and bulk lead on Ag(111) studied in vacuum and in an electrochemical cellSurface Science, 1980
- Substrate-diffusion-controlled film growth: Silver and copper on lead (111)Thin Solid Films, 1980
- A model for the Auger electron spectroscopy of systems exhibiting layer growth, and its application to the deposition of silver on nickelSurface Science, 1973
- A simple model for the dependence of Auger intensities on specimen thicknessSurface Science, 1969