PtSi–n–Si Schottky-barrier photodetectors with stable spectral responsivity in the 120–250 nm spectral range

9 December 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 69 (24) , 3662-3664
https://doi.org/10.1063/1.117016

Abstract

Front‐illuminated PtSi–n–Si Schottky barrier photodiodes have been developed for the ultraviolet and vacuum ultraviolet spectral range. Their spectral responsivity was determined in the 120–500 nm spectral range by use of a cryogenic electrical substitution radiometer operated with spectrally dispersed synchrotron radiation. For wavelengths below 250 nm, the spectral responsivity is about 0.03 A/W, comparable to that of GaAsP Schottky photodiodes. Unlike the GaAsP diodes, the new PtSi–n–Si diodes have a spatially uniform response which is virtually stable after prolonged exposure to short wavelength radiation. Even after a radiant exposure of 150 mJ cm⁻² at wavelength 120 nm, the relative reduction in spectral responsivity remains below 0.2%. Due to these features, this type of photodiode is a promising candidate for use as secondary detector standard in the ultraviolet and vacuum ultraviolet spectral ranges.

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