Hydrothermal epitaxy of highly oriented TiO2 thin films on silicon
- 27 March 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (13) , 1608-1610
- https://doi.org/10.1063/1.113867
Abstract
Highly oriented thin films (0.15 μm) of titania on Si (100) substrates have been prepared first by hydrothermal treatment of TiO42− solution (0.6–1.2M) at relatively low temperatures. Films made at 100–200 °C contain only the anatase phase with (112) orientation, adhere well to the substrates. The hydrothermal temperature, time, and the pH value of TiO42− solution are the critical parameters determining the formation of films.Keywords
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