Nearly ideal enhanced barrier height Schottky contacts to n-InP for MESFET applications

27 April 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (9) , 572-574
https://doi.org/10.1049/el:19890390

Abstract

We report the substantial enhancement of the Schottky barrier height of n-InP, using a new surface passivation process. Au contacts on the passivated surface resulted in nearly ideal Schottky diodes with barrier heights as large as 0.83 eV, ideality factors between 1.02 and 1.17 and high breakdown voltages. The passivation is found to promote the formation of a phosphorus oxide at the interface, which is believed to be responsible for the enhancement of the barrier height. The highquality of the contacts makes them ideal for InP MESFET gate electrodes.

Keywords

ENHANCED BARRIER HEIGHT SCHOTTKY CONTACTS
NEARLY IDEAL SCHOTTKY DIODES
HIGH BREAKDOWN VOLTAGES
AU-INP
IDEALITY FACTORS
SURFACE PASSIVATION
INP
MESFET GATE ELECTRODES

This publication has 0 references indexed in Scilit: