Low-temperature expitaxial growth of (100) silicon
- 18 August 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (17) , 669-671
- https://doi.org/10.1049/el:19830456
Abstract
Epitaxial silicon films have been grown onto as-received and implanted (100) silicon wafers by electron-beam evaporation. A high-temperature treatment to remove native oxide was not employed. Optimum temperatures for epitaxial growth were between 600°C and 700°C. Deposition rates were from 30 to 80 nm/min and the operating pressure was < 5 × 10 − 7 mbar. The Rutherford backscattering spectra of the optimum films have values of χmin indistinguishable from that of a bulk wafer (3.9%).Keywords
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