A One Watt CW Avalanche Diode Source or Power Amplifier
- 1 January 1969
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Methods of extending the dynamic range of solid state negative resistance amplifiers have been suggested which employ a "traveling wave" approach, and a cascading approach. This has also been applied to oscillators. There are reports of frequency locking of several coupled oscillators to combine their individual output powers. This paper describes the generation of 1 Watt CW at X-band by a specific method of cascading one avalanche diode oscillator and three avalanche diode power amplifiers. The diodes used are the diffused gallium arsenide units recently constructed in an inverted structure in the Micro State device laboratory, capable of generating over 300 mW CW at X-band.Keywords
This publication has 7 references indexed in Scilit:
- X-band oscillator and amplifier experiments using avalanche diode periodic structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969
- A broadband multistage avalanche amplifier at X-bandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969
- Network Integration Approaches for Multiple-Diode High Power Microwave GenerationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1968
- A traveling-wave approach to the high-power solid-state oscillatorProceedings of the IEEE, 1968
- A two-port IMPATT diode traveling wave amplifierProceedings of the IEEE, 1968
- 2noscillators combined with 3-dB directional couplers for output power summingProceedings of the IEEE, 1967
- Frequency locking and modulation of microwave silicon avalanche diode oscillatorsProceedings of the IEEE, 1966