Barrier mechanism of Pt/Ta and Pt/Ti layers for SrTiO3 thin film capacitors on Si
- 1 June 1994
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 4 (4) , 305-313
- https://doi.org/10.1080/10584589408223874
Abstract
The barrier effect of Pt/Ta and Pt/Ti has been investigated, when used as bottom electrodes for SrTiO3 thin film capacitors on Si. The Pt/Ta/Si stacks were more stable than the Pt/Ti/Si, both in vacuum and in oxygen annealing. Though the Pt/Ta bilayer was suitable for the SrTiO3 deposition at 400[ddot]C, its resistivity became slightly higher after the deposition at 600[ddot]C, due to Ta layer oxidation during the SrTiO3 deposition. This would result in a contact resistance problem for high density dynamic random access memory application.Keywords
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