100 W 671 nm visible laser diode array
- 5 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (23) , 2115-2116
- https://doi.org/10.1049/el:19921357
Abstract
A GaInP/AIGaInP, strained-layer, single quantum well, monlithic laser diode array is described which has achieved a room temperature quasi-CW (100μs, 10Hz) output of over 100W at 671 nm.Keywords
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