Ozone oxidation of silicon
- 7 January 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (1) , 115-116
- https://doi.org/10.1049/el:19930075
Abstract
For the first time the low temperature oxidation of silicon with ozone generated by the barrier discharge method is reported. At 550°C, some 105 Å of SiO2 can be grown in only 30 min, which is a reaction enhancement rate of 750% over conventional growth rates obtained using dry molecular oxygen at the same temperature.Keywords
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