Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 643-645
- https://doi.org/10.1063/1.93226
Abstract
Monolithic integration of 1.3-μm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-μm cavity length are obtained. MIS depletion mode FET’s with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.Keywords
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