Amorphous silicon thin-film transistors with two-layer gate insulator

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Abstract
Hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs) which utilize two layers of amorphous silicon nitride with different composition as a gate insulator have been studied. The field‐effect mobility, subthreshold slope, and stability of an a‐Si:H TFT are enhanced by inserting a thin silicon‐rich nitride layer between the a‐Si:H and the gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a‐Si:H and the top silicon‐rich nitride layer, and the good dielectric quality of the bottom nitride layer.