Calculation of Deposition Uniformity in rf Sputtering

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Abstract
Assuming a uniform flux of ions upon the target, a cosine distribution of sputtered material, unity sticking coefficient on the substrate, no surface mobility and no gas collisions, deposition uniformities are calculated for several device configurations. These include: (1) the “peak” configuration of adjacent rectangular targets, (2) the disk type, and (3) coaxial cylindrical targets and substrate holders. Areas over which the deposition uniformities are predicted to be within ±1% to ±10% were computed and these results compared with available experimental results obtained from rf sputtering devices. The good agreement obtained shows that the method does give a practical approach to estimating deposition uniformities for rf sputtering systems where the assumptions are reasonably well obeyed. The peak configuration is examined in some detail and it is found that there is an optimum position for the substrate table at which the largest, area of uniform deposition is obtained.

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