Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals
- 15 May 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (20) , 2940-2942
- https://doi.org/10.1063/1.126523
Abstract
The formation of oxynitride films less than 2.0 nm by using oxygen and nitrogen radicals produced by an electron cyclotron resonance plasma in an ultrahigh-vacuum system has been studied. We found that the N concentration can be controlled at values up to 15% and that, although the interface roughness tends to increase with increasing N concentration, supplying oxygen and nitrogen radicals simultaneously decreases the roughness of the film and increases its nitrogen concentration (N: 12.1%, root mean square: 0.12 nm). We also could easily control the nitrogen profile in the oxynitride less than 2.0-nm-thick by using different processing sequences.Keywords
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