Excitonic and other interband transitions insingle crystals
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (11) , 7488-7494
- https://doi.org/10.1103/physrevb.50.7488
Abstract
A study of the optical properties of the layered compound is presented. Reflection spectra were measured at room temperature, in the energy region 1.5–6.2 eV. Transmission spectra were measured in the temperature range 10–290 K, in the energy region 1.5–3.5 eV. Two structures, at energy positions 2.58 and 2.87 eV (10 K), are attributed to transitions to ground exciton states, from valence states split because of the spin-orbit interaction, at the point Γ of the Brillouin zone. Two other structures at higher energies are attributed to transitions at and critical points, respectively. The second-derivative spectra ɛ̃/d were fitted, accordingly, to analytic two-dimensional critical-point line shapes. Lorentzian line shapes are used to fit the structures of excitonic origin. The temperature dependence of the peaks and their broadening parameters are also presented.
This publication has 15 references indexed in Scilit:
- Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystalsMaterials Research Bulletin, 1992
- Higher interband transitions in the uv region of GaSePhysical Review B, 1991
- Interband critical points of GaAs and their temperature dependencePhysical Review B, 1987
- Vibrational Spectra of TlInS2, TlIn0.95Ga0.05S2, and TlIn(S0.8Se0.2)2 Crystals in the Vicinity of Phase TransitionsPhysica Status Solidi (b), 1986
- Phonon-induced lifetime broadenings of electronic states and critical points in Si and GePhysical Review B, 1986
- Temperature dependence of the dielectric function of germaniumPhysical Review B, 1984
- Electroabsorption in TlInS2Solid State Communications, 1982
- High-pressure Raman study of the ternary chalcogenides TlGa, TlGa, TlIn, and TlInPhysical Review B, 1982
- On Some Properties of TlInS2 (Se2, Te2) Single CrystalsPhysica Status Solidi (b), 1969
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967