Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors
- 22 April 1987
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0797, 98-110
- https://doi.org/10.1117/12.941031
Abstract
Reactive plasma etching is being increasingly utilized in the fabrication of III-V - based electronic and optoelectronic devices. The high resolution and control afforded by dry etching processes have led to their rapid move from research to manufacturing applications. This paper will review some of those applications, processes, progress and problems associated with reactive plasma etching of III-V materials.Keywords
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