On-line capacitance—Voltage doping profile measurement of low-dose ion implants
- 1 December 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (12) , 2268-2272
- https://doi.org/10.1109/T-ED.1980.20263
Abstract
An on-line computer-controlled measurement system gathers and analyzes 1-MHz capacitance-voltage data for ion-implanted MOS structures. The analysis algorithm takes into account the majority-carrier distribution for depletion-region widths of less than two Debye lengths and is, therefore, valid for implant profile measurements up to the semiconductor-oxide interface.C-Vdata and implant profiles are presented for low-dose implants in the 1011-1012-cm-2range. The measurement technique is a sensitive indicator of low-dose implant distribution and may be used in the process control of MOSFET threshold-adjusting implants and other low-dose implant applications.Keywords
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