Mo, Au, and Cu ions of 150−350−keV energy have been implanted, off axis, in <110≳ Cu single crystals at a dose of 1016 ions/cm2. The radiation damage and its annealing are studied by backscattering and channeling of a 3.5 MeV alpha−particle beam. There is no significant surface disorder. The radiation damage, however, has been found to extend to rather large depths, up to 16 times the projected range of the implanted ions. Annealing of the disorder caused by 150−keV Mo ions has been studied up to 900°C. The disorder anneals gradually at rather high temperatures accompanied by a marked decrease in the disorder depth. This suggests depletion of the disorder from within the crystal towards the surface. The disorder has also been studied as a function of substrate temperature, during implantation, from −130° to 350°C. The results are interpreted in terms of the existing radiation damage theory and arguments based upon consideration of surface stress.