Cross-gate MNOS memory device
- 1 August 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (8) , 1071-1072
- https://doi.org/10.1109/t-ed.1978.19226
Abstract
A novel MNOS device structure is described. It solves the parasitic leakage problem, sometimes also known as the sidewalk effect.Keywords
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