Correlated Electron-Trapping Events in a One-Dimensional Channel
- 1 August 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (8S)
- https://doi.org/10.1143/jjap.34.4302
Abstract
We demonstrate correlated trapping events in a GaAs/AlxGa1-xAs one-dimensional (1D) channel. Due to the Coulomb potential of electrons trapped near the 1D channel, continuous trapping-detrapping of these electron causes fluctuations in the bottle-neck potential, and thus random telegraph signals (RTSs) in the conductance of the channel. RTS appears when the Fermi level crosses the single-electron energy levels of traps. Our results show that when two trap states are at the Fermi level, two RTSs do not occur at the same time, but do interact with each other. This implies that there is electrostatic interaction between the two trapping events.Keywords
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