GaAs and related heterojunction charge-coupled devices
- 1 June 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (6) , 1172-1180
- https://doi.org/10.1109/t-ed.1980.20002
Abstract
A Schottky-barrier gate GaAs charge-coupled device (CCD) technology is described. Experimental devices fabricated in this technology have operated with charge transfer efficiency >0.999/transfer and-have operated at clock frequencyf_{cl} = 500MHz. Implications of this technology in high-speed signal processing and in visible and near-infrared imaging are discussed.Keywords
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