Characteristics of separated-gate JFETs
- 6 November 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (23) , 1244-1246
- https://doi.org/10.1049/el:19860853
Abstract
In the subthreshold region of JFETs a reach-through diode is formed between the top and bottom gates. This has consequences for the application of separated-gate JFETs.Keywords
This publication has 0 references indexed in Scilit: