Resonant tunnelling structures with very thin contact layers using nonalloyed Ge/Pd contacts

7 June 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (12) , 797-798
https://doi.org/10.1049/el:19900520

Abstract

A resonant tunnelling diode with a 10 nm top contact layer has been fabricated using a nonalloyed Ge/Pd ohmic contact. Resonant tunnelling behaviour is still observed. This metallisation scheme is useful for device applications where ohmic contacts to very thin layers are required.

Keywords

RESONANT TUNNELLING DIODE
VERY THIN CONTACT LAYERS
NONALLOYED GE/PD/N-GAAS CONTACTS
OHMIC CONTACT
GE-PD-GAAS
METALLISATION SCHEME

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