Pulsed Ion Beam Induced Crystallization and Amorphization of Silicon
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ion-beam induced crystallization and amorphization at a crystalline/amorphous interface in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969