Effective segregation coefficient of carbon impurity in LEC GaAs crystals
- 1 January 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (1) , 240-242
- https://doi.org/10.1016/0022-0248(85)90070-3
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAsJournal of Applied Physics, 1982
- Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometryIEEE Transactions on Electron Devices, 1982
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980