Carrier-induced phase shift and absorption in a semiconductor laser waveguide under current injection

Publisher Website
Google Scholar
Abstract
The effects of injected carriers on the refractive index of an AlGaAs/GaAs semiconductor laser waveguide are investigated through measurements of the carrier-induced phase shift and free-carrier absorption of a guided probe laser beam at a wavelength below the band gap of the GaAs waveguide. The carrier densities and carrier lifetimes at various injection current levels can be deduced directly from these measurements. A carrier-induced phase shift of more than π/2 is observed.