Novel silicon avalanche diode as a direct modulated cathode with integrated planar electron-optics
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 155-157
- https://doi.org/10.1109/iedm.1990.237204
Abstract
Design constraints, process technology, and electrical and related stability results are discussed for silicon avalanche-diodes with integrated electron-optic elements. It is demonstrated that such diodes can operate in vacuum tubes. The vacuum current is obtained by applying a voltage of less than 12 V. Modulation by video-frequencies is possible above the avalanche breakdown voltage of about 5 V. Introducing planar lenses gives new options for traditional gun designs. Long lifetimes and stable operation can be obtained when chips are mounted with 'IC-discipline' in a tube and, in operation, are not subjected to ion bombardment.Keywords
This publication has 2 references indexed in Scilit:
- Cesium migration and equilibrium in a strong electric field on the surface of siliconApplied Physics Letters, 1986
- Design, technology, and behavior of a silicon avalanche cathodeJournal of Vacuum Science & Technology B, 1986