Temperature Variation of Lattice Strain in Slightly Mismatched InGaP/GaAs LPE Layers (0<(Δa/a)⊥\lesssim 0.6%)
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L159-161
- https://doi.org/10.1143/jjap.28.l159
Abstract
The variation of the lattice mismatch of InGaP/GaAs (001) layers with temperature (15 \lesssim T \lesssim 600°C) has been measured. The samples had layer thicknesses of 1–2 µm and a room temperature lattice mismatch of 0<(Δ a/a)⊥\lesssim 0.6%. It was found that the critical lattice mismatch for the coherent growth was (Δ a/a)⊥∼0.25% at room temperature. Photoluminescence measurement also supported this result.Keywords
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