REFLECTIVITY THICKNESS CORRECTIONS FOR SILICON DIOXIDE FILMS ON SILICON
- 1 August 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (3) , 105-106
- https://doi.org/10.1063/1.1755037
Abstract
The interference of light can be used to determine the thickness of thin silicon dioxide films on silicon. This Letter contains corrections to the standard interference formula due to: (1) phase shift at the silicon dioxidesilicon interface and (2) the reflectivity variation at the air‐silicon dioxide and silicon dioxide‐silicon interfaces. These corrections are calculated as a function of wavelength, order, incident angle, and polarization.Keywords
This publication has 3 references indexed in Scilit:
- Phase-Shift-Corrected Thickness Determination of Silicon Dioxide on Silicon by Ultraviolet InterferenceJournal of Applied Physics, 1967
- Determination of silicon oxide thicknessSolid-State Electronics, 1966
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960