Efficient CdSe/p+n Si tunnel junction photoanode for solar cell
- 1 June 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (11) , 970-972
- https://doi.org/10.1063/1.92971
Abstract
The 1.03‐V solar photoemf generated by this CdSe/p+n Si photoanode lends itself to solar storage applications. We present evidence that the 21‐mA/cm2 short circuit solar photocurrent results from a low resistance tunnel path between the CdSe conduction band and the p+ Si valence band. We use the dark electron current to calculate that the hole quasi‐Fermi level at the CdSe surface of the solar illuminated open circuited photoanode lies 0.16 V below the CdSe corrosion potential. Hence even on open circuit the CdSe surface of the illuminated photoanode will corrode.Keywords
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