Intermodal injection locking of semiconductor lasers
- 27 September 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (20) , 809-811
- https://doi.org/10.1049/el:19840550
Abstract
Injection locking of a GaAlAs laser by coupling into non-lasing Fabry-Perot modes is described. Locking of a slave laser mode as far as 22 mode spacings (60 Å) away from the gain curve centre is obtained. The dependence of the locking bandwidth on the injected power and the wavelength separation between the free-running and injected mode (Δλ) is described. The dependence of the power required for locking on the magnitude of Δλ is consistent with a 192 Å-wide quadratic gain profile.Keywords
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