Intercrystalline potential barriers due to irregularly distributed traps
- 15 July 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 36 (1) , 165-169
- https://doi.org/10.1016/0040-6090(76)90430-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Non-polarized memory-switching characteristics of ZnTe thin filmsSolid-State Electronics, 1973
- Switching and memory characteristics of ZnTe thin filmsSolid-State Electronics, 1972
- A contribution to the theory of the space-charge region in thin semiconductor monocrystalline filmsCzechoslovak Journal of Physics, 1970