AlGaN/GaN HFET amplifier performance and limitations
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1811-1814
- https://doi.org/10.1109/mwsym.2002.1012214
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructuresJournal of Applied Physics, 2001
- Very-high power density AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000
- Wide bandgap semiconductor transistors for microwave power amplifiersIEEE Microwave Magazine, 2000