A study of the electrical conductivity processes in amorphous semiconductors using the computer simulation method III. Three-dimensional case
- 31 May 1976
- journal article
- Published by Elsevier in Computer Physics Communications
- Vol. 11 (2) , 177-181
- https://doi.org/10.1016/0010-4655(76)90050-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Localized and nonlocalized impurity states in amorphous germaniumSolid State Communications, 1973
- Evaluation of Mott's Parameters for Hopping Conduction in Amorphous Ge, Si, and Se-SiPhysical Review Letters, 1973
- Electrical Properties and Anisotropy in Amorphous Si andAlloyPhysical Review B, 1973
- Electrical Properties of Amorphous InSbPhysical Review B, 1973
- Hopping Conductivity in Disordered SystemsPhysical Review B, 1971